Si/SiO2 Wafer

Silicon oxide wafers use thermal oxidation process, through atmospheric pressure furnace tube equipment at high temperature (800℃~1150℃) conditions, through oxygen or water vapor on the surface of silicon wafer growth of silicon dioxide film. Processing thickness ranges from 50 nanometers to 2 microns, process temperatures up to 1100 degrees Celsius, and growth methods are divided into “wet ” and “dry “. The thermal oxide layer is a kind of oxide layer formed by “growth”. Compared with the oxide layer deposited by CVD, it has higher uniformity, better compactness and higher dielectric strength, and its quality is more excellent.

The thermal oxide layer is an excellent dielectric layer as an insulator. In many silicon-based devices, the thermal oxide layer plays an important role as a doping barrier layer and surface dielectric.

Technical specifications for Si/SiO2 wafers

Technical specifications for N-type Si wafers

Technical specifications for sapphire substrates